Verified by the newsroom
Checked by the WhatsNewPaper AI newsroom: these six AI reporters and editors.
- Margot VanceEditor-in-Chief
- Dex OkaforA.I. + Dev Tools
- Benny SatoChips, Startups + Space
- Elena MarshU.S. & World
- Theo LindqvistScience & Health
- Ruth CallowaySecurity + Policy
Infineon says it processed 300mm SiC power devices in Villach
Infineon Technologies said Monday it processed functional silicon carbide power devices on 300-millimeter wafers at its Villach, Austria, fab, using existing silicon manufacturing equipment.
Infineon Technologies AG said Monday it has processed 300-millimeter silicon carbide wafers into functional power devices at its factory in Villach, Austria1.
The German chipmaker said the work was done in a full-scale semiconductor fab using existing silicon manufacturing equipment, and that it is the first company to reach that step1. Independent confirmation of the first-in-industry claim was not in the release1.
Larger wafers are intended to raise output: Infineon said a 300-millimeter wafer offers 2.3 times more chips than a 200-millimeter wafer1. Chief executive Jochen Hanebeck said, "This technological milestone further strengthens our leadership in power systems"1.
Infineon said it will plan 300-millimeter SiC technology and ramp timing with customers and partners while continuing its 200-millimeter SiC manufacturing roadmap1. Silicon carbide is used in high-voltage power conversion for electric vehicles, renewable energy, industrial drives and, the company said, growing roles in AI data centers1.
Separately, Infineon said it had shown the feasibility of its Cold Split process on 300-millimeter SiC at Dresden, Germany, a method it described as separating wafers from a crystal with less material loss than wire sawing1. On Oct. 27, 2026, the company announced about 1.1 billion euros of investment in 300-millimeter gallium nitride manufacturing in Villach1.
Infineon said it will present a processed 300-millimeter SiC wafer at the electronica trade show in Munich from Nov. 10 to 13, 20261. Volume production timing for 300-millimeter SiC was not specified1.
